Abstract

An additive manufacturing (AM) method for the deposition of metallic layer in micron scale on monocrystalline silicon wafer surface by high voltage induced weak electric arc machining (HV-μEAM) has been proposed. The process characteristics of HV-μEAM are analyzed to fulfil the metal material deposition. The influence of the processing parameters on the deposition effect were studied with copper as additive electrode material. Using the optimal parameters, a number of complex trajectory deposition experiments have been carried out and a QD character-type deposition layer with a height of 139.09 μm has been obtained. The deposition has good continuity and high forming precision. It is proven that the new method is achievable and efficient for patterning metallic materials in the micro- and nano-scale on the silicon substrates surface.

Highlights

  • With the further development of lightweight, miniaturization, and functional integration of mechanical products, the application of microstructure and miniature devices with characteristic sizes ranging from nm to mm and with certain functions and patterns has increased at a rapid pace in various areas such as aerospace [1], instrumentation [2], material protection [3], and functional surface [4]

  • The further development of electrical discharge machining (EDM) deposition is restricted by the low efficiency, the small

  • In the process of high voltage (HV)-μEAM, HV breakdown gas discharge is the premise of experiment

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Summary

Introduction

With the further development of lightweight, miniaturization, and functional integration of mechanical products, the application of microstructure and miniature devices with characteristic sizes ranging from nm to mm and with certain functions and patterns has increased at a rapid pace in various areas such as aerospace [1], instrumentation [2], material protection [3], and functional surface [4]. Taking the fabrication of micro-nano devices mainly on silicon substrate as an example, various thin films with different thickness and different properties were grown on silicon substrate by various processes, including radio-frequency magnetron sputtering [6], chemical solution deposition (CSD) [7], and pulsed laser deposition method (PLD) [8], in order to realize the application in micro-electro-mechanical systems (MEMS) [9], optical devices [10] and other aspects. Other forms of manufacturing methods, including selective laser melting (SLM) [11,12], electrochemical deposition [13,14], micro electrical discharge machining (EDM) deposition [15,16], and other methods have achieved certain results in specific processing areas. The further development of EDM deposition is restricted by the low efficiency, the small

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