Abstract
The rapid development of display technologies has raised interest in arrays of self-emitting, individually controlled light sources atthe microscale. Gallium nitride (GaN) micro-light-emitting diode (LED) technology meets this demand. However, the current technology is not suitable for the fabrication of arrays of submicron light sources that can be controlled individually. Our approach is based on nanoLED arrays that can directly address each array element and a self-pitch with dimensions below the wavelength of light. The design and fabrication processes are explained in detail and possess two geometries: a 6 × 6 array with 400 nm LEDs and a 2 × 32 line array with 200 nm LEDs. These nanoLEDs are developed as core elements of a novel on-chip super-resolution microscope. GaN technology, based on its physical properties, is an ideal platform for such nanoLEDs.
Highlights
Introduction Gallium nitride (GaN)light-emitting diode (LED) have revolutionized lighting technology because of their outstanding efficiency and versatility
The main challenge for fabricating such lines is providing every single LED of the array an individual contact line and avoiding short circuits and pixel crosstalk at dimensions of only 200 nm on GaN LED wafers, which are known to be characterized by high defect densities, a relatively high roughness and a pronounced nonisotropic chemical behavior[16]
The definition of addressable pixels in an array can be realized in two ways: by separating the LEDs physically or by making use of the low conductivity of p-GaN
Summary
Introduction GaNLEDs have revolutionized lighting technology because of their outstanding efficiency and versatility. Due to the relatively slow GaN surface recombination, such GaN microLEDs have a high efficiency even at very small dimensions, upon which the surfaces usually play a dominant role in carrier recombination. This is in contrast to conventional InGaAlP LEDs, where the efficiency is substantially decreases for dimensions smaller than 20 μm[1,2]. High-density and fully integrated microLEDs can be used for microdisplays with sizes of 1 cm[2] and below in augmented reality applications, where high efficiency, high brightness, robustness, and degree of integration are key requirements Such microdisplays can be made of microLEDs with dimensions below 10 μm and fully integrated on a single chip with a high fill factor[3,4,5]
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