Abstract
Abstract The construction of heterojunction is an effective strategy to manipulate the dynamic behaviors of photo-induced charges. It is essential for wide band gap semiconductor to introduce defects reasonably to mediate electronic properties and charge behaviors. Herein, through an in situ etching growing method and thermal treatment, dual defective ternary photocatalyst ZnS/ZnO-In2O3 with porous layered structure and extensive heterojunction interfaces has been prepared for visible light photocatalysis of water splitting. The suitable position of intermediate energy level endows the ternary photocatalyst with the ability of electrons directed flow between the different components, and the transfer mode follows Z-scheme. The cascaded dual defects on ZnO and ZnS synergistically facilitate the efficient separation of photo-generated charges through the intimate interface, and further enhance visible light photocatalysis performance. This work is expected to enlighten the rational design of dual defects for wide bandgap semiconductor.
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