Directional resolution of the heavy-hole dispersion in GaAs by hot-electron luminescence spectroscopy

Abstract

The heavy-hole dispersion of bulk GaAs along specific high-symmetry directions may be obtained from hot electron to neutral acceptor photoluminescence spectroscopy. The degree of linear polarization eta is analysed in the light of a detailed lineshape calculation to identify the emission from carriers with a particular wavevector direction. The technique is demonstrated for the (100) direction and in principle also for the (111) and (110) directions. It allows a systematic plot of Ehh(k) with sub-meV accuracy over a range of wavevectors near Gamma .