Abstract
The effects of electric field and doping species on directional crystallization of a-Si channels under high-density current stressing have been investigated. The a-Si channels were implanted by 30keV BF2+ or As+ to a dose of 3×1015ions/cm2. A preferential growth of poly-Si from anode toward cathode was found on BF2+, As+ and un-implanted a-Si samples. The results indicate that directional growth of poly-Si is caused by the strong electric field effect on positively charged Ni ions under high-density current stressing.
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