Directional movement of gold nanoparticles on the silicon substrate due to the Laplace pressure: A molecular dynamics simulation study

Abstract

Due to superior ductility, oxidation resistance, and conductive properties, gold nanoparticles are widely used in semiconductor devices. From printing inks to electronic chips, gold nanoparticles are widely used as conductors. Nowadays, with the size of electronic chips getting smaller, gold nanoparticles have become an essential component in chip design. For example, they can connect resistors, conductors, and other electronic chip components. However, interactions of gold nanoparticles with curved substrates at high temperatures have rarely been studied. In our study, we simulated interactions of gold nanoparticles at high temperatures on a curved silicon substrate. It is observed that at above the metlting point, gold nanoparticles moved directionally under the effect of curvature gradients, and the curved surface can be used to control the coalescence of gold nanoparticles. The size, temperature of gold nanoparticles, and curvature gradients of the substrate are altered to observe their effects on gold nanoparticle movement. According to the results, we conclude that surface curvature gradients induce the Laplace pressure, and the Laplace pressure drives liquid gold nanoparticles to move directionally.