Abstract
To form large-grained polycrystalline-silicon (poly-Si) films on glass substrates, we propose a new lateral crystallization method, zone melting for film, which uses a high-power fundamental continuous wave yttrium aluminum garnet (CW-YAG) laser and an absorption layer. The laser's infrared light is changed into thermal energy at the absorption layer and heats the amorphous Si (a-Si) film. Next, the Si film is zone-melted and solidified in one direction with a scanning laser beam. By this method, columnar structured Si films were successfully formed with scanning velocities from 400 to 1000 mm/s. Very large typical grains of 1 or 2 µm by few hundreds of µm were obtained on both glass and quartz substrates, and the long axes of the grains were almost parallel to the laser scanning direction. Textures were also observed in these columnar structured Si films. Recombination carrier lifetimes of these films were several times longer than those of conventional low-temperature-processed poly-Si films.
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