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Abstract
We present the results of kinetic Monte Carlo simulations of homoepitaxial growth on a patterned substrate in the presence of an extra barrier to a diffusing adatom crossing of steps from above (Ehrlich-Schwoebel barrier) on topographically patterned surfaces. Our results indicate that over a wide range of Ehrlich-Schwoebel barrier heights, incident atom fluxes, and temperatures that multilayer islands or ``growth mounds'' grow in arrangements which are directed by the topographical pattern. Our simulations indicate that a series of arrangements should form as the temperature is changed due to a competition between the temperature-dependent mound size and the pattern period. We compare these predictions with experimental observation of directed mound assembly on nanopatterned GaAs(001).
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