Abstract
The fabrication, electrical characterization and self-assembly of silicon nanocubes (SiNCs) is reported. Arrays of highly doped SiNCs featuring edge lengths of 110 nm are fabricated in large yields on silicon-on-insulator substrates using nano imprint-lithography as well as wet chemical and dry etching techniques. Interdigitated electrode arrays serve as a platform for the electrical characterization of single SiNCs. Self-assembly of SiNC agglomerates in solution is realized by cube surface functionalization with self-assembled monolayers of trimethoxysilane molecules. Complementary terminal groups form covalent bonds between adjacent particles via Cu(I)-catalyzed alkyne-azide cycloaddition towards bottom-up, directed assembly of functional electrical building blocks.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
