Abstract
The direction of the drift of adatoms induced by direct-current (DC) heating of Si(111)-(1×1) surfaces was studied from shape changes of a rectangular groove that was made by a focused ion beam (FIB) apparatus. It was found that the drift direction is to the current direction irrespective of the temperatures of the three ranges where DC-induced step-bunching behavior reverses twice. The result clearly shows that reversals of the current-induced step bunching are not due to reversals of the effective charge on silicon adatoms, but due to changes in the mechanism of step bunching.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
