Direct transfer of gold nanoislands from a MoS2 stamp to a Si–H surface

Abstract

A printing technique is proposed for the transfer of metallic nanoislands between two semiconductor surfaces in UHV. For the preparation of the stamp, a systematic study of the growth conditions of small, flat triangular shape Au nanoislands at the top surface of microfabricated MoS2 pillars is presented. Those pillars are organized in a stamping matrix to increase the transfer rate. Up to 10% of Au nanoislands can be transferred to a H-Si(100) surface. The atomic scale quality of the interface between the Au nanoislands and the semiconductor surface is characterized by transmission electron microscopy cross-sectional imaging. This MoS2 stamping technique is extended to other surfaces such as mica, SiO2, and graphite. It permits to handle well shaped Au nanoislands on surfaces where a direct growth of flat nanoislands is not possible. This printing of well defined triangular Au nanoislands offers the unique possibility to construct ultraclean interconnecting nanopad systems by scanning tunneling microscope on atomically clean and electronically suitable substrates, manipulating those nanopads one at a time. The apex of the triangular shaped island is suitable for nanocontact to a surface atomic scale conducting wire.