Direct Transfer Manufacturing of Flexible Silicon Carbide Nanowire-Network Prototype Device

Abstract

Flexible and transparent devices are expected to meet increasing consumer demands for upgrades in wearable devices, smart electronic and photonic applications. In this work, nano-manufacturing of a flexible and powerless silicon carbide nanowire network ultraviolet photodetector (SiCNW-network UVPD) prototype was investigated by a very cost-effective direct transfer method. Indeed, the powerless device exhibited a photo-to-dark current ratio (PDCR) of 15 with a responsivity of 5.92 mA/W at 254 nm wavelength exposure. The reliability and durability of the device was evaluated by bending tests. In fact, the PDCR of the device was still very good even after seventy-five bending cycles (~ 96 % of the rest state). In brief, our flexible, powerless SiCNW-network UVPD device with cost-effectiveness, good performance, and durability can provide feasible alternatives for new generation wearable optoelectronic products.