Abstract
We describe an in situ measurement method for the determination of the junction temperature of integrated microelectronic silicon devices. The basic principle of the method is the observation of the junction leakage current of the device. Device operation at sufficient high currents (leading to a high device temperature, typically above 120°C and more) makes the leakage current rise due to device self-heating. This also allows a simple extraction of the thermal resistance of the device. Sample measurements are demonstrated and compared with microfluorescence thermography measurement. For a sample vertical integrated DMOSFET, a very good agreement of both methods is validated.
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