Abstract
A low-temperature chemical vapor growth of Ge nanowires using Ga as seed material is demonstrated. The structural and chemical analysis reveals the homogeneous incorporation of ∼3.5 at. % Ga in the Ge nanowires. The Ga-containing Ge nanowires behave like metallic conductors with a resistivity of about ∼300 μΩcm due to Ga hyperdoping with electronic contributions of one-third of the incorporated Ga atoms. This is the highest conduction value observed by in situ doping of group IV nanowires reported to date. This work demonstrates that Ga is both an efficient seed material at low temperatures for Ge nanowire growth and an effective dopant changing the semiconductor into a metal-like conductor.
Highlights
Anisotropic Ge nanostructures have been used as active components for different applications including field effect transistors,[1] lithium ion batteries,[2] solar cells,[3] and humidity sensors.[4]
This work demonstrates that Ga is both an efficient seed material at low temperatures for Ge nanowire growth and an effective dopant changing the semiconductor into a metal-like conductor
The incorporation of dopants in the Ge matrix has recently been the focus of several studies, and rather effective doping with heavy group III atoms has been observed in low-temperature growth of Ge NWs using In as seeding material[19] and for Bi in Ge nanoparticles.[20]
Summary
Anisotropic Ge nanostructures have been used as active components for different applications including field effect transistors,[1] lithium ion batteries,[2] solar cells,[3] and humidity sensors.[4]. The incorporation of dopants in the Ge matrix has recently been the focus of several studies, and rather effective doping with heavy group III atoms has been observed in low-temperature growth of Ge NWs using In as seeding material[19] and for Bi in Ge nanoparticles.[20] The electrical properties of the In-containing Ge NWs have not been investigated, which might be related to pronounced twinning of the NWs derived by that approach. % Ga is incorporated in the growing Ge matrix, leading to the formation of a material with dramatically altered electronic properties. Such hyperdoped Ge NWs with ∼5 × 1020 cm−3 active p-dopant atoms will exhibit quasimetallic conductivity
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