Direct synthesis of epitaxial zinc sulphide layers on zinc single-crystal substrates

Abstract

Epitaxial thin zinc sulphide layers have been grown by direct synthesis on the basal face of zinc single crystals. Sulphur vapour reacted on the surface of the crystals, which were grown in sealed glass ampoules evacuated to 10 −6 torr. The thicknesses of the layers investigated varied from several hundred to 1000–1500 Å. The morphology, structure and epitaxy of the films were examined by electron microscope, electron and X-ray diffraction techniques. It was found that the film lattice had a sphalerite-type cubic structure, the perfection of the layer structure increasing with rise in both the substrate temperature and the sulphur vapour pressure. The layers were produced at substrate temperatures of 250°–400°C: polycrystalline ZnS films were obtained in the range 250°–300°C; at higher temperatures a definite texture gradually appeared and above 370°C, with a sulphur vapour pressure of 0.2–10 torr, the films became epitaxial. The following epitaxial relation was established: {111} ZnS ∥ {0001} Zn with <110 > ZnS ∥ <11 20 > Zn The zinc sulphide films reproduced the surface structure of the supporting zinc single crystals very well and could conveniently be used as electron microscope replicas.