Abstract
This paper presents directly interpretable atomic resolution images of dislocation structures at interfaces in CdTe/GaAs(001) systems. This is achieved using the technique of Z-contrast imaging in a 300 kV scanning transmission electron microscope in conjunction with maximum entropy image analysis. In addition to being used to further the understanding of the relation between growth conditions and exhibited properties, the data presented provides direct information on the atomic arrangements at dislocation cores.
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