Direct sub-100-nm patterning of an organic low-k dielectric for electrical and optical interconnects

Abstract

Low-k dielectric materials compatible with copper interconnect fabrication processes extending to the sub-50-nm technology nodes are desired for high speed integrated circuit (IC) fabrication. We demonstrate that bisbenzocyclobutene (BCB), an organic low-k dielectric material, can be patterned with sub-100-nm resolution using electron beam lithography, providing new avenues for nanoscale electrical and optical interconnect fabrication.