Direct stress measurement of Si(111) 7×7 reconstruction

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We have focused on stress measurements of the reconstructed Si(111) 7×7 and the H-terminated Si(111) 1×1 surfaces. In order to obtain information on both the surface stress and the surface structure simultaneously, we have combined the surface-curvature and the reflection-high-electron-energy-diffraction instrumentations in an identical ultrahigh vacuum system. At the beginning of Ge wetting layer growth on H-terminated Si(111), the stress gradient drastically changes accompanied by change in the surface structure resulting from the H desorption. Comparison of the surface stress behaviors between Ge wetting layer growth on the H-terminated Si(111) 1×1 and the Si(111) 7×7 surfaces reveals that the Si(111) 1×1 surface releases 1.6N/m (=J/m2), or (1.3eV/(1×1 unit cell)), of the surface energy from the strong tensile Si(111) 7×7 reconstruction.