Direct statistical simulation of cluster formation and growth upon expansion of vapor from a sudden spherical source. II. Expansion into gas

Abstract

Processes of formation of silicon clusters upon expansion of vapor from a sudden source into a surrounding inert gas are considered. Vapor expansion and condensation are described using the method of direct statistical simulation. The clustering model includes the description of cluster growth and decomposition, as well as energy exchange accompanying these processes. Main regularities of the cluster formation and growth during expansion of vapor into a gas are considered. The model and the results are of considerable interest for solving problems associated with evaporation of rapidly heated small particles.