Abstract
At the heterointerface of a top ferroelectric Pb(Zr${}_{0.2}$Ti${}_{0.8}$)O${}_{3}$ (PZT) ultrathin film and a bottom La${}_{0.7}$Sr${}_{0.3}$MnO${}_{3}$ (LSMO) electrode, we used continuous synchrotron-radiation photoelectron spectroscopy to probe in situ and demonstrated that the interfacial charges are reversible and their affected valence-band barrier height becomes modulated upon switching the polarization in the top layer. By monitoring the core-level shifting of the buried LSMO layer under continuous illumination of synchrotron radiation, we directly observed a temporal screening of polarization induced by the photon-generated carriers in the top PZT layer. This dynamic characterization of the core-level shifting of the buried layer demonstrates an effective method to probe the electric conduction and ferroelectric polarization of an ultrathin ferroelectric oxide thin film.
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