Abstract
By using electric-field-induced optical second-harmonic generation (EFISHG) measurement, we directly probed internal electrostatic fields formed in indium-zinc-oxide (IZO)/fullerene (C60)/Al diodes, which are electrically shorted. Results showed that an internal electric-field is formed in the direction from the IZO to Al electrode, whereas the electric-field points in the opposite direction by the use of an interlayer of bathocuproine (BCP) between C60 and Al. We concluded that the EFISHG measurement directly probes internal electric-fields formed in organic devices, and it is thus helpful for understanding the effect of an interlayer in diodes.
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