Abstract
A direct photolithographic patterning method of regioregular poly(3-hexylthiophene) (rr-P3HT) as a semiconductive layer of organic field-effect transistors (OFETs) has been developed. The performance (0.092 cm2/Vs) of a bottom-contact type OFET using the patterned rr-P3HT as a semiconductive layer was almost the same as that (0.10 cm2/Vs) using the pristine rr-P3HT.
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