Abstract
AbstractA direct parameter extraction method of EEHEMT nonlinear empirical model is proposed in this paper. An improved DC model is also presented by considering the channel length modulation parameter () as a function of gate‐to‐source voltage. Model verification is carried out by comparison of measured and simulated current–voltage characteristics and S‐parameters. Good agreement is obtained between the measured and modeled results for 2 × 15 μm gatewidth (number of gate fingers × gatewidth) 70‐nm gatelength InP high electron mobility transistors (HEMT). An increased accuracy in modeling the I–V and RF characteristics is also obtained in the proposed model, compared with the conventional one.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
