Abstract
AbstractA direct parameter extraction method of EEHEMT nonlinear empirical model is proposed in this paper. An improved DC model is also presented by considering the channel length modulation parameter () as a function of gate‐to‐source voltage. Model verification is carried out by comparison of measured and simulated current–voltage characteristics and S‐parameters. Good agreement is obtained between the measured and modeled results for 2 × 15 μm gatewidth (number of gate fingers × gatewidth) 70‐nm gatelength InP high electron mobility transistors (HEMT). An increased accuracy in modeling the I–V and RF characteristics is also obtained in the proposed model, compared with the conventional one.
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