Direct Optical Patterning of Nanocrystal-Based Thin-Film Transistors and Light-Emitting Diodes through Native Ligand Cleavage

Abstract

Developing techniques of advanced patterning for colloidal nanocrystals (NCs) is essential to construct high-performance electronic/optoelectronic devices. However, conventional NC patterning methods require complicated photolithography processes and/or delicately designed photocrosslinkers. Here, we develop a direct, photoresist-free method to pattern functional NCs while avoiding any photosensitive molecules. In our approach, the solubility of NCs is switched through cleaving native organic ligands under UV light exposure. Developing with the mother solvent produces fine patterns with feature sizes (as low as 10 μm) comparable to that of conventional photolithography. Importantly, the obtained patterns of NCs allow postpatterning ligand exchange. As representatives, we demonstrate patterned NC-based thin-film transistors (TFTs) and quantum dot light-emitting diodes (QLEDs). The In2O3 NC-based TFTs are turned from inactive to active using the patterning process and display substantially enhanced electronic performances upon ligand exchange with inorganic ligands. Furthermore, exquisite fluorescence quantum dot (QD) patterns are enabled. The QLEDs fabricated with ZnCl2-treated green QD patterns exhibit electroluminescence performances that are comparable to those of unpatterned QLEDs. Our strategy offers a powerful yet simple patterning technique for fabricating low-temperature thin-film electronics and optoelectronics, which is expected to be a versatile and extensible approach for solution-processed NC-based thin-film device manufacturing.