Abstract
We describe imaging spectroscopy of GaAs1−xNx∕GaAs single quantum wells using low-temperature near-field scanning optical microscope with a high spatial resolution of 35nm. In near-field photoluminescence spectra of a GaAs1−xNx∕GaAs(x=0.7%) quantum well, the narrow spectral peaks with a point emission spatial profile (localized exciton emission) come from local N-rich regions (spontaneous N clusters), and the broad peaks with spatial extension (delocalized exciton emission) are random alloy regions. Localized exciton emissions due to spontaneous N clusters are also observed in GaAs1−xNx with a higher N concentration (x=1.2%).
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