Direct Observation of the Edge Termination of Surface Steps on 4H/6H-SiC {0001} by Tilted Low-Voltage Scanning Electron Microscopy

Abstract

We demonstrate a simple method for direct observation of the stacking orientation on 4H/6H-SiC {0001} surfaces by low-voltage SEM. The difference in the direction of the stacking orientation is observed as SEM contrast. By utilizing this technique, the bond configuration at {1-10n} steps can be determined by the SEM contrast.