Abstract
An unusual defect structure occurring on the Si(001) surface has been studied using scanning tunneling microscopy (STM). The structure has c(8\ifmmode\times\else\texttimes\fi{}8) periodicity, as evidenced by both STM and low-energy electron diffraction (LEED). Although Auger electron spectroscopy (AES) shows no contamination, secondary ion mass spectroscopy data indicate the presence of trace amounts of Cu. This impurity is implicated in the reconstruction, being related to a similar mechanism for Ni-induced defect structures previously found on Si(001). The c(8\ifmmode\times\else\texttimes\fi{}8) structure is seen to consist of rows of raised rectangular structures formed by added dimers perpendicular to dimer rows on the terrace with alternate rows shifted out of phase. \textcopyright{} 1996 The American Physical Society.
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