Abstract
In the transition layer of the Si(001)–SiO2 interface, Si lattice strain and its distribution were directly observed by medium energy ion scattering spectroscopy for thermal and ion beam oxides. The strain was in the vertical direction, and the maximum values at the SiO2 side of the transition layer were 0.96% and 2.8% for the thermal and ion beam oxides, respectively.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
