Abstract

In this paper, we systematically studied the Raman vibration of black phosphorus (BP) transferred onto a germanium (Ge)-coated polydimethylsiloxane (PDMS) substrate, which generates a much higher contrast in BP. This engineered flexible substrate allowed us to directly observe a much thinner BP layer on the flexible substrate at the desired location. Therefore, it enabled us to perform Raman spectroscopy immediately after exfoliation. The Raman spectra obtained from several BP layers with different thicknesses revealed that the clear peak shifting rates for the Ag1, B2g, and Ag2 modes were 0.15, 0.11, and 0.11 cm−1/nm, respectively. Using this value to identify a 2–3-layered BP, a study on the strain–Raman spectrum relationship was conducted, with a maximum uniaxial strain of 0.89%. The peak shifting of Ag1, B2g, and Ag2 caused by this uniaxial strain were measured to be 0.86, 0.63, and 0.21 cm−1/Δε, respectively.

Highlights

  • Strain engineering has been known as an effective way to modulate the electronic, transport, and optical properties of semiconductors [1,2,3,4]

  • We have systematically studied the Raman vibration of black phosphorus (BP) transferred onto a Ge-coated PDMS substrate, which provided a much higher BP contrast in BP compared to the uncoated substrate and allowed us to investigate much thinner layers of BP directly on a flexible substrate

  • The Raman spectra taken from several BP layers with different thickness revealed that the clear peak shifting rates for the Ag1, B2g, and Ag2 modes were 0.15 cm−1/nm, 0.11 cm−1/nm, and 0.11 cm−1/nm, respectively

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Summary

Introduction

Strain engineering has been known as an effective way to modulate the electronic, transport, and optical properties of semiconductors [1,2,3,4]. Most of the experiments on the strain properties of BP have used thick BP (>10 nm thickness), because the visibility of BP decreases dramatically as it becomes thinner (similar to other 2D materials).

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