Abstract
Atomic-scale surface migration of a Ga atom on a hydrogen-terminated Si(100)- $(2\ifmmode\times\else\texttimes\fi{}1)$-H surface is studied using low-temperature scanning tunneling microscopy and first-principles calculations. The Ga atom migrates in a linear potential well confined by adjacent dimer rows and local dihydride defects, and is observed as a continuous linear protrusion (Ga-bar structure) at a narrow range of temperatures near 100 K. We point out that the height of the Ga-bar structure maps out the local variation in potential energy at individual adsorption sites.
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