Abstract
The structure of strained-layer quantum well heterostructures grown by metalorganic chemical vapor deposition has been examined using both conventional and high resolution electron microscopy. It has been possible to show that the lattice mismatch in superlattice systems containing strain of up to 7.1×10−3 is accommodated by the introduction of a tetragonal expansion and compression of the lattice of successive layers. This can be seen in the splitting of the (001) spots in the electron diffraction pattern and by the bending of (111) lattice fringes at the heterojunction interfaces.
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