Abstract
The effect of hydrogenation on the electrical properties of N-doped ZnSe and ZnS x Se 1− x films grown by molecular-beam epitaxy is investigated. Hydrogenation of samples with a net acceptor density ( N a− N d) around (2–5)×10 16 cm −3 decreases the net acceptor density close to the surface and the peak height in deep-level transient spectra of the dominating nitrogen acceptor with activation energies 110 and 120 meV in ZnSe and ZnS 0.08Se 0.82 thin films, respectively. Samples with N a− N d in the 10 17 cm −3 range did not exhibit such changes, while samples with N a− N d less than few times 10 16 cm −3 became highly resistive.
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