Direct Observation of Gate Leakage Paths in AlGaN/GaN High Electron Mobility Transistors by Electron Beam–Induced Current

Abstract

In this study, the electron beam–induced current technique was used to investigate the spatial distribution of gate leakage paths in AlGaN/GaN high electron mobility transistors. The mesa-type devices exhibited three leakage paths: the mesa edge leakage, the sidewall leakage, and the isolation leakage. In mesa-isolated devices with a SiN passivation layer, the dominant leakage paths were through the SiN/GaN interface as a result of the imperfections at the SiN/semiconductor interface. The mesa sidewall leakage in a passivated device gradually decreased from the gate to the source/drain along the mesa edge. This was correlated with the diffusion length and the distance of the electron beam from the gate. In the device without a SiN passivation layer, the major leakage path was found to be through the mesa edge under the gate metal, which was induced by the gate-channel overlap at the mesa edge.