Abstract
The first direct measurements of electrically injected carrier distributions in the base of 4H-SiC power diodes are reported. A novel approach of combining micron-resolution free-carrier absorption technique with optical imaging of e-h recombination radiation was applied to study the spatial and temporal plasma build-up. The excess carrier distributions both along and across the base region were examined during forward biasing within a 50-250 A/cm/sup 2/ range. The revealed local deviations of carrier density and lifetimes are attributed to inherent structural imperfections of the epilayer. Numerical device simulation demonstrated a good agreement with experiment and validated the importance of actual lifetime, contact, and emitter injection parameters to the overall plasma formation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
