Direct observation of enhanced performance in suspended ReS2 photodetectors.

Abstract

Rhenium disulfide (ReS2) has emerged as a promising material for future optoelectric applications due to its extraordinary electrical, mechanical, and optoelectrical properties. However, the ReS2-based photodetectors are severely restricted by their slow response speed (>10 s). Here, we demonstrate a high-performance polarization-sensitive photodetector based on suspended ReS2. Such a transistor shows an n-type behavior with the mobility of about 14.1 cm2V-1s-1, an on/off ratio of 105, and a responsivity of 0.22 A/W. Benefitting from well-developed contact between Au and the ReS2 channel and reduced interface scattering from the Si substrate, the response time of the device can be as short as 83.5 and 325.3µs, respectively, which are three orders of magnitude faster than that reported earlier. Furthermore, the suspended ReS2 photodetector also has the capability to detect polarized light (Imax/Imin ≈ 1.4 at 532 nm) due to the robust in-plane anisotropy of the material. These findings offer an efficient approach for improving the performance of ReS2-based photodetectors.