Abstract
The electron leakage through the heterobarrier consisting of a thin InGaAsP active layer and a p-InP confining layer was directly observed by using a novel InGaAsP/InP light-emitting diode (LED) structure. In the present structure, electrons leaking from the active layer were confined in a subsidiary quaternary layer having a crystal composition different from that of the active layer, and the recombination emission caused by these electrons was optically detected. Experimental results showed that significant electron leakage can occur in the present InGaAsP/InP double heterostructure (DH) system, suggesting a possibility of the electron leakage being one of the dominant mechanisms of sublinearity in the light intensity-current characteristics in InGaAsP/InP DH LED’s operating at wavelengths shorter than 1.3 μm and also of the temperature dependence of threshold current in laser diodes.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
