Abstract
The optical deep-level transient spectroscopy (ODLTS) technique has been used to measure defects in GaInP/GaAs/Ge multi-junction solar cells for the first time. Three modes of ODLTS were used to detect defects in the top two sub-cells of this triple-junction cell separately. For one non-irradiated sample, only one level in the top sub-cell at low temperature was observed. Three samples were irradiated by 100 keV, 130 keV and 170 keV low-energy protons, respectively, and several levels were observed. By computational simulation, the distributions of radiation-induced defects in the samples were given. In the n+/p GaInP top sub-cells, the levels HT1 and ET1 appeared in both 130 keV and 170 keV proton-irradiated samples. In the n+/p GaAs middle sub-cells, the level HM1 also appeared in both the samples.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
