Abstract
AbstractHeterojunctions formed by ultrathin conductive polymer [poly(3,4‐ethylenedioxythiophene): poly(styrenesulfonate)—PEDOT:PSS] films and n‐type crystalline silicon are investigated by photoelectron spectroscopy. Large shifts of Si 2p core levels upon PEDOT:PSS deposition provide evidence that a dopant‐free p–n junction, i.e., an inversion layer, is formed within Si. Among the investigated PEDOT:PSS formulations, the largest induced band bending within Si (0.71 eV) is found for PH1000 (high PEDOT content) combined with a wetting agent and the solvent additive dimethyl sulfoxide (DMSO). Without DMSO, the induced band bending is reduced, as is also the case with a PEDOT:PSS formulation with higher PSS content. The interfacial energy level alignment correlates well with the characteristics of PEDOT:PSS/n‐Si solar cells, where high polymer conductivity and sufficient Si‐passivation are also required to achieve high power conversion efficiency.
Highlights
Hene):poly(styrenesulfonate) (PEDOT:PSS) as one of the electrical contacts have drawn ethylenedioxythiophene): poly(styrenesulfonate)—PEDOT:PSS] films and wide attention in the recent years due to n-type crystalline silicon are investigated by photoelectron spectroscopy
Based on the direct observation of Si 2p core level shifts, we found that PEDOT:PSS induces substantial band bending in n-Si, leading to an inversion layer
Similar Si 2p core level shifts, indicative of surface band bending in n-Si, were reported for coating Si with other polymers[24] or with small organic molecules.[17b,25] The S 2p core level spectra (Figure 1b) show two major contributions, one from PSS at the high binding energy (BE) side and the other from PEDOT at the low BE side.[10a,26] Since some of the sulfonate units of PSS gain electrons from PEDOT, charged and neutral species (PSS− and PSSH)[27] contribute to the S 2p core levels
Summary
Hene):poly(styrenesulfonate) (PEDOT:PSS) as one of the electrical contacts have drawn ethylenedioxythiophene): poly(styrenesulfonate)—PEDOT:PSS] films and wide attention in the recent years due to n-type crystalline silicon are investigated by photoelectron spectroscopy. Large shifts of Si 2p core levels upon PEDOT:PSS deposition provide evidence that a dopant-free p–n junction, i.e., an inversion layer, is formed within Si. Among the investigated PEDOT:PSS formulations, the largest induced band bending within Si (0.71 eV) is found for PH1000 (high PEDOT content) osition process of PEDOT:PSS, while at the same time retaining the potential for high power conversion efficiency (PCE).[1] In a typical Al/n-Si/PEDOT:PSS/Ag grid solar cell, light illumination generates electron–. Without DMSO, the induced band bending is reduced, as is the case with a PEDOT:PSS formulation with higher PSS content. Tasks:[3] i) it induces an inversion layer in n-Si (i.e., a p-dopant-free Si p–n junction is formed) to block electrons and extract
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