Abstract
AbstractA fast and accurate method to determine the noise parameters of microwave FETs, based on a new expression of the device noise figure as a function of the Y‐parameters and two equivalent noise temperatures, is presented. The method requires only the measured small‐signal parameters and 50Ω noise figure, thus avoiding the extraction of the small‐signal equivalent circuit. It is particularly suitable for noise characterization of coplanar devices. Good agreement with the results of more conventional methods is demonstrated in a wide frequency range. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 44: 565–569, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20698
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