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Abstract
Ballistic electron emission microscopy measurements on individual "end-on" Au Schottky contacts to vertical Si nanowires (NWs) indicate that the local Schottky barrier height at the contact edge is 23 ± 3 meV lower than at the contact center. Finite-element electrostatic simulations suggest that this is due to a larger interface electric field at the contact edge resulting from (equilibrium) positive charge in Si/SiO(2) interface states near the Au/NW contact, induced by local band bending due to the high work function Au film.
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