Abstract
The electrical conduction in the amorphous state of the phase change material is through the localized states. The density of these trap states or the trap spacing plays a major role in determining the characteristics of the PCM cell in the sub threshold region. In this work, we have developed a method to extract the trap spacing in the amorphous material directly from the I-V characteristics rather than the conventional method of curve fitting. Further the dependence of the trap spacing on the amorphous thickness and reset voltage is discussed. Preliminary results on the 1/f noise measurements are also reported.
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