Direct measurement of the nitrogen content by XPS in self‐passivated TaNx thin films

Abstract

AbstractThe nitrogen content in tantalum nitride (TaNx) thin films, where x indicates that TaNx is not generally stoechiometric, can be measured directly by XPS. This is the purpose of the present study. However, the XPS spectra of TaNx present electron energy loss spectroscopy (EELS) peaks that lead to a complex peak fitting, particularly for self‐passivated thin films. A complete peak fitting procedure based upon Tougaard's background, the Doniach‐Sunjic Function and EELS peaks, is presented. It is applied to two self‐passivated TaNx thin films elaborated by reactive sputtering and presenting a different nitrogen content. The physical properties of these surfaces are interpreted in terms of Ta 4f7/2 chemical states directly dependent on the nitrogen content. The main results are discussed and improvements are proposed to the method. Copyright © 2008 John Wiley & Sons, Ltd.