Abstract
We present a direct method to measure the oxygen stoichiometry in an oxide film with an accuracy of about 2%. It is based on a combination of 18O annealing and high mass resolution secondary ion mass spectroscopy. Calibration has been done on a LaNiO3 film whose electrical properties dependence on oxygen stoichiometry are well documented. The method is illustrated with a series of LaNiO3 films grown on SrTiO3 substrates prepared with different oxygen stoichiometries. The large influence of the surface state on oxygen exchange is evidenced in films grown on different substrate orientations or coated with a thin layer of LaAlO3. Oxygen surface exchange and bulk diffusion is then discussed for both LaNiO3 and SrVO3 films.
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