Abstract
Nanocontacts Magneto-Resistive (NCMR) Spin-Valve devices using NOL (Nano-Oxide Layer) have been reported to show some kind of a new MR effect. If the NC resistivity nears to the bulk's value without limit, the NC resistance will be almost dominated by the sharvin resistance at the NC with 1 to 2nm size, which conductance regime dominates the NC resistance of our NCMR attract much interest for understanding MR mechanism of our NCMR, where the NC size is certainly just 1 to 2nm but the NC resistivity is still unknown. So, in this study we constructed the home-made circuit for directly measuring each conductive channel-current through each nano-contact with in-situ conducting AFM and tried to evaluate quantitatively the resistivity of each single NC in the NOL.
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