Direct Measure of Strain and Electronic Structure in GaAs∕GaP Core-Shell Nanowires

H E Jackson,M Fickenscher,C Jagadish,Q Gao,J H Kang,Hyeonsik Cheong,M Montazeri,Y Guo,Jisoon Ihm,L M Smith,J M Yarrison-Rice,M E Pistol,J Zou,H H Tan,C E Pryor

doi:10.1063/1.3666461

Direct Measure of Strain and Electronic Structure in GaAs∕GaP Core-Shell Nanowires

H E Jackson, M Fickenscher + Show 13 more

Open Access

https://doi.org/10.1063/1.3666461

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Publication Date: Jan 1, 2011

Citations: 1

Affiliation: Australian National University, Miami University, University of Queensland, Lund University, University of Iowa

#Direct Measure Of Strain #GaAs Core + Show 8 more

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Abstract

We have studied core‐shell nanowires with widely different core and shell lattice constants, namely GaAs core with GaP shell nanowires. We use Raman scattering to probe strain in these nanowires and relate this strain to the observed photoluminescence. The Raman and photoluminescence measurements are in agreement with 8 band k.p calculations for these structures. These results suggest that the electronic properties of core‐shall nanowires can be tuned over a wide range by using the strain generated by growing core/shell materials with different lattice constants and different core/shell thicknesses.

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