Abstract
A direct diamond epitaxy on the silicon substrate is demonstrated not only at the interface formed during the growth process but also at the nucleation sites. The small (001) terraces with dimensions of several atomic distances at the site of nucleation are formed due to the roughening of silicon surface and lead to the grain misorientation. A model is presented which attempts to explain the initial stages of diamond growth. Predictions are made for methods of improving the nucleation of epitaxial diamond crystallites.
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