Abstract

The direct liquid injection chemical vapor deposition (DLI-CVD) method is used to grow pristine and molybdenum (Mo)-doped monoclinic scheelite phase bismuth vanadate (BVO) photoelectrodes. Superior photoelectrochemical (PEC) performance is achieved with ∼200 ± 50 nm thick pristine and 8 at. % Mo-doped BVO films grown at 550 °C. Photocurrent densities as high as ∼1.65 and 3.25 mA/cm2 are obtained for pristine and optimum 8% Mo-doped BVO electrodes, respectively, at 1.23 V vs reversible hydrogen electrode (RHE) under visible light AM 1.5G (100 mW/cm2) in 0.5 M phosphate buffer electrolyte in the presence of 0.1 M Na2SO3 hole scavenger. Somewhat lower photocurrent densities of ∼1.5 and 2.4 mA/cm2 are obtained for pristine and optimum 8% Mo-doped BVO electrodes, respectively, in the absence of Na2SO3. Onset potential values as low as ∼0.1 and 0.3 V vs RHE are achieved with pristine and Mo-doped BVO films for sulfite and water oxidation, respectively. The increased photocurrent density with Mo doping is attrib...

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call