Abstract
We implement direct laser texturing (DiLaT) into small-area (2 × 2 cm 2) passivated emitter and rear solar cells (PERC). On monocrystalline float-zone silicon (FZ-Si) wafers, we achieve an independently confirmed energy conversion efficiency of 19.9% that demonstrates the applicability of DiLaT to high-efficiency solar cells. Applying our DiLaT process to block-cast multicrystalline silicon (mc-Si) wafers, we achieve short-circuit current densities Jsc up to 39.3 mA/cm2 and efficiencies up to 17.9%. The reduced Jsc value of our mc-Si solar cells compared with the FZ-Si cells is shown to be predominantly due to increased recombination in the bulk and/or the rear.
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