Abstract
An 0.12 μm gate length direct ion-implanted GaAs MESFET exhibiting excellent DC and microwave characteristics has been developed. By using a shallow implant schedule to form a highly-doped channel and an AsH <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> overpressure annealing system to optimize the shallow dopant profile, the GaAs MESFET performance was further improved. Peak transconductance of 500 mS/mm was obtained at I/sub ds/=380 mA/mm. A noise figure of 0.9 dB with associated gain of 8.9 dB were achieved at 18 GHz. The current gain cutoff frequency f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> of 160 GHz indicates the suitability of this 0.12 μm T-gate device for millimeter-wave IC applications.
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