Abstract
Thin film formation by direct ion beam deposition is described. The advantages of the low energy ion beam deposition method are discussed together with limitations of this method. The description of a prototype ion beam deposition system and lead and magnesium ion beam deposition using this system are given in detail. The lead and magnesium deposits are characterized by Rutherford backscattering analysis and electron microscopy. The most important advantage of the low energy ion beam deposition method is the precise controllability of deposition parameters.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
